AZOM

Plasma Etching of SiO2 with High Selectivity Against Si3N4 and Si

Quadrupole mass-spectroscopy has reported significant neutral and ionic species in the unique C 5 HF 7 /O 2 /Ar plasma, including C x F y (X>2), C x HF y, and C x F y (Y/X<2). Using C 5 HF 7 /O 2 /Ar ...
Nature

Plasma Chemistry and Etching Processes in Semiconductor Fabrication

Plasma chemistry and etching processes form the backbone of modern semiconductor fabrication, enabling the precise patterning and removal of material layers essential to device performance. By ...
Semiconductor Engineering

Cryogenic Etch: A Key Enabler Of 3D NAND

Released every 12 to 18 months, 3D NAND scaling outpaces most other semiconductor devices in replacement rate and performance ...
AZOM

Experimenting with Spontaneous and Plasma Si Etching

Mass spectrometry, by contrast, is a powerful technique for the analysis of any process gas. Careful consideration of differences in pressure, reaction time scales and process flow is essential for ...
Semiconductor Engineering

Highly Selective Etch Rolls Out For Next-Gen Chips

Several etch vendors are starting to ship next-generation selective etch tools, paving the way for new memory and logic devices. Applied Materials was the first vendor to ship a next-gen selective ...
Nanowerk

New metrology for tuning the etch rate uniformity in plasma etch processes

(Nanowerk News) Imec and KLA Tencor have established a metrology method for optimizing the etch rate uniformity (ERU) in a transformer coupled plasma (TCP) reactor. The proposed metrology method makes ...