CHAMPAIGN, Ill. — A new type of transistor structure, invented by scientists at the University of Illinois at Urbana-Champaign, has broken the 600 gigahertz speed barrier. The goal of a terahertz ...

Researchers at the Manisa Celal Bayar University in Turkey have proposed using a skived-type aluminum heat sink (HS) to cool insulated gate bipolar transistor (IGBT) arrays in solar PV inverters.

New technical paper titled “New ternary inverter with memory function using silicon feedback field-effect transistors” was published from researchers at Korea University. In this study, we present a ...

Using a gate drive optocoupler with MOSFET buffer driving capability enables users to scale IGBT gate drive designs to the power requirements for a wide range of motor drive and inverter systems.

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...